TRANSISTOR MOSFET N 500V 8A Rds(on): 0.85R 125W TO220AB

Description

Product Category: MOSFET

Brand: Vishay Semiconductors
Id - Continuous Drain Current: 8 A
Vds - Drain-Source Breakdown Voltage: 500 V
Rds On - Drain-Source Resistance: 850 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 125 W
Mounting Style: Through Hole
Package/Case: TO-220-3
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 20 ns
Minimum Operating Temperature: - 55 C
Rise Time: 23 ns

Caractèristiques