TRANSISTOR

Description

Product Category: Bipolar Transistors - BJT
RoHS: RoHS Compliant Details
Brand: Central Semiconductor
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 75 V
Collector- Emitter Voltage VCEO Max: 50 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 1.5 V
Maximum DC Collector Current: 0.5 A
Gain Bandwidth Product fT: 60 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package/Case: TO-39
DC Collector/Base Gain hFE Min: 40
DC Current Gain hFE Max: 120
Minimum Operating Temperature: - 65 C
Packaging: Bulk
Pd - Power Dissipation: 3 W

Caractèristiques