TRANSISTOR

Description

Product Category: Bipolar Transistors - BJT
RoHS: No
Brand: ON Semiconductor
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 50 V
Collector- Emitter Voltage VCEO Max: 45 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 0.25 V
Maximum DC Collector Current: 0.1 A
Gain Bandwidth Product fT: 250 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package/Case: TO-92-3 (TO-226)
DC Collector/Base Gain hFE Min: 100
Minimum Operating Temperature: - 55 C
Packaging: Bulk
Pd - Power Dissipation: 625 mW

Caractèristiques