Description
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 75 V
Collector- Emitter Voltage VCEO Max: 40 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 1 V
Maximum DC Collector Current: 0.8 A
Gain Bandwidth Product fT: 300 MHz (Min)
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package/Case: TO-92
DC Collector/Base Gain hFE Min: 35 at 100 uA at 10 V, 50 at 1 mA at 10 V, 75 at 10 mA at 10 V, 100 at 150 mA at 10 V, 50 at 150 mA at 1 V, 40 at 500 mA at 10 V
Minimum Operating Temperature: - 65 C
Packaging: Bulk
Pd - Power Dissipation: 625 mW